Samsung debuts 30nm DDR3 DRAM Tweet

1st February 2010

Samsung 30nm DDR3 DRAM

Samsung reports that the new 30nm DRAM has completed customer evaluations successfully in 2Gb densities. The DRAM modules will be used in servers, desktops, and notebooks at 1.5V and 1.35V. Samsung claims that the new 30nm process raises productivity by 60% compared to 40nm DDR3. The crux of that is that the new 30nm process doubles the production cost-efficiency compared to 50nm and 60nm processes used previously.

The 30nm process also reduces power consumption by up to 30% compared to 50nm DRAM modules. The new 30nm modules can be used in a 4GB DDR3 module for a notebook that consumes only three watts per hour, amounting to 3% of the total power usage of a notebook. The 30nm DDR3 is set for mass production in the second half of 2010.

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